N-Alkyl functionalized barbituric and thiobarbituric acid bithiophene derivatives for vacuum deposited n-channel OFETs

Ying Shu; Annabel Mikosch; Kevin N. Winzenberg; Peter Kemppinen; Christopher D. Easton; Ante Bilic; Craig M. Forsyth; Christopher J. Dunn; Th. Birendra Singh; Gavin E. Collis

doi:10.1039/C4TC00002A

N-Alkyl functionalized barbituric and thiobarbituric acid bithiophene derivatives for vacuum deposited n-channel OFETs†

Ying Shu,^a Annabel Mikosch,^a Kevin N. Winzenberg,^a Peter Kemppinen,^a Christopher D. Easton,^a Ante Bilic,^b Craig M. Forsyth,^c Christopher J. Dunn,^a Th. Birendra Singh^a and Gavin E. Collis*^a

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^a CSIRO Materials Science and Engineering, Private Bag 10, Clayton South MDC, VIC 3169, Australia
E-mail: Gavin.Collis@csiro.au

^b CSIRO Computational Informatics, Private Bag 33, Clayton South, VIC 3169, Australia

^c School of Chemistry, Monash University, Clayton, VIC 3800, Australia

Abstract

A family of barbituric and thiobarbituric acid end capped small molecule semiconductors were synthesized, characterized and shown to exhibit n-channel organic thin film transistor properties. By changing the N-alkyl substituent from methyl to ethyl, a dramatic increase in electron mobilities was observed with values nearing 0.3 cm² V⁻¹ s⁻¹.

Journal of Materials Chemistry C

N-Alkyl functionalized barbituric and thiobarbituric acid bithiophene derivatives for vacuum deposited n-channel OFETs†

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N-Alkyl functionalized barbituric and thiobarbituric acid bithiophene derivatives for vacuum deposited n-channel OFETs

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