Flexible memory devices with tunable electrical bistability via controlled energetics in donor–donor and donor–acceptor conjugated polymers

Hung-Ju Yen; Hsinhan Tsai; Cheng-Yu Kuo; Wanyi Nie; Aditya D. Mohite; Gautam Gupta; Jian Wang; Jia-Hao Wu; Guey-Sheng Liou; Hsing-Lin Wang

doi:10.1039/C4TC00039K

Flexible memory devices with tunable electrical bistability via controlled energetics in donor–donor and donor–acceptor conjugated polymers†

Hung-Ju Yen,^a Hsinhan Tsai,^a Cheng-Yu Kuo,^a Wanyi Nie,^b Aditya D. Mohite,^b Gautam Gupta,^b Jian Wang,^c Jia-Hao Wu,^d Guey-Sheng Liou^d and Hsing-Lin Wang*^a

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* Corresponding authors

^a Physical Chemistry and Applied Spectroscopy (C-PCS), Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
E-mail: hwang@lanl.gov

^b Material Synthesis and Integrated Devices (MPA-11), Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA

^c Materials Science in Radiation & Dynamic (MST-8), Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA

^d Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan

Abstract

Flexible nonvolatile memory devices were fabricated from benzodithiophene-based donor–donor and donor–acceptor conjugated polymers with thermally/non-thermally recoverable memory behaviors.

Journal of Materials Chemistry C

Flexible memory devices with tunable electrical bistability via controlled energetics in donor–donor and donor–acceptor conjugated polymers†

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Flexible memory devices with tunable electrical bistability via controlled energetics in donor–donor and donor–acceptor conjugated polymers

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