Correction: Epitaxial growth of GaN films on unconventional oxide substrates
Abstract
Correction for ‘Epitaxial growth of GaN films on unconventional oxide substrates’ by Wenliang Wang et al., J. Mater. Chem. C, 2014, 2, 9342–9358.
* Corresponding authors
a
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
E-mail:
msgli@scut.edu.cn
Tel: +86 20 87112957
b Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
Correction for ‘Epitaxial growth of GaN films on unconventional oxide substrates’ by Wenliang Wang et al., J. Mater. Chem. C, 2014, 2, 9342–9358.
W. Wang, W. Yang, H. Wang and G. Li, J. Mater. Chem. C, 2014, 2, 10218 DOI: 10.1039/C4TC90149E
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