Issue 47, 2014

Correction: Epitaxial growth of GaN films on unconventional oxide substrates

Abstract

Correction for ‘Epitaxial growth of GaN films on unconventional oxide substrates’ by Wenliang Wang et al., J. Mater. Chem. C, 2014, 2, 9342–9358.

Associated articles

Article information

Article type
Correction
Submitted
21 Oct 2014
Accepted
21 Oct 2014
First published
04 Nov 2014
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2014,2, 10218-10218

Correction: Epitaxial growth of GaN films on unconventional oxide substrates

W. Wang, W. Yang, H. Wang and G. Li, J. Mater. Chem. C, 2014, 2, 10218 DOI: 10.1039/C4TC90149E

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