Microwave-assisted solution–liquid–solid growth of Ge1−xSnx nanowires with high tin content

Abstract

A microwave assisted growth procedure for the first bottom-up synthesis of germanium tin alloy (Ge_1−xSn_x) nanowires with constant diameter along their axis was developed. Ge_1−xSn_x nanowires with mean diameters of 190 ± 30 nm and a homogeneous distribution of 12.4 ± 0.7% Sn in Ge have been synthesized.