Issue 3, 2015

The real TiO2/HTM interface of solid-state dye solar cells: role of trapped states from a multiscale modelling perspective

Abstract

In this paper we present a multiscale simulation of charge transport in a solid-state dye-sensitized solar cell, where the real morphology between TiO2 and the hole transport material is included. The geometry of the interface is obtained from an electron tomography measurement and imported in a simulation software. Charge distribution, electric field and current densities are computed using the drift-diffusion model. We use this approach to investigate the electrostatic effect of trap states at the interface between the electron and hole transport materials. The simulations show that when the trapped electrons are not screened by external additives, the dynamics of holes is perturbed. Holes accumulate at the interface, enhancing recombination and reducing cell performance.

Graphical abstract: The real TiO2/HTM interface of solid-state dye solar cells: role of trapped states from a multiscale modelling perspective

Supplementary files

Article information

Article type
Paper
Submitted
08 Sep 2014
Accepted
15 Nov 2014
First published
21 Nov 2014
This article is Open Access
Creative Commons BY license

Nanoscale, 2015,7, 1136-1144

Author version available

The real TiO2/HTM interface of solid-state dye solar cells: role of trapped states from a multiscale modelling perspective

A. Gagliardi, M. Auf der Maur, D. Gentilini, F. di Fonzo, A. Abrusci, H. J. Snaith, G. Divitini, C. Ducati and A. Di Carlo, Nanoscale, 2015, 7, 1136 DOI: 10.1039/C4NR05208K

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