Manganite-based memristive heterojunction with tunable non-linear I–V characteristics

Abstract

A resistive random access memory (ReRAM) based on the memristive effect allows high-density integration through a cross-point array (CPA) structure. However, a significant common drawback of the CPA configuration is the crosstalk between cells. Here, we introduce a solution based on a novel heterojunction stack solely made of members of the perovskite manganite family Pr_1−xCa_xMnO₃ (PCMO) and CaMnO_3−δ (CMO) which show electroforming-free bipolar resistive switching. The heterojunction consists of rectifying interfaces and shows a symmetrical and tunable non-linear current–voltage curve. The spectromicroscopic measurements support the scenario of specialized roles, with the memristive effect taking place at the active Al–PCMO interface via a redox mechanism, while non-linearity was achieved by adopting a rectifying double interface PCMO–CMO–PCMO.