ZnO homojunction UV photodetector based on solution-grown Sb-doped p-type ZnO nanorods and pure n-type ZnO nanorods

Abstract

A ZnO homojunction UV photodetector based on Sb-doped p-type ZnO nanorods (NRs) and n-type ZnO NRs was fabricated by a low temperature solution method. The fabricated homojunction shows well-defined rectifying characteristics, confirming the p-type conductivity of the Sb-doped ZnO NRs. Moreover, a high UV sensitivity of 3300% and a fast reset time to UV illumination are also achieved.