Issue 34, 2015
From the journal:

RSC Advances

Nonvolatile memory devices based on carbon nano-dot doped poly(vinyl alcohol) composites with low operation voltage and high ON/OFF ratio†

Lingqiang Meng,abc   Minhuan Lan,abc   Liang Guo,abc   Lisha Xie,d   Hui Wang,abc   Jiechao Ge,ab   Weimin Liu,ab   Ying Wang*ab  and  Pengfei Wangab  

* Corresponding authors

a Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, China
E-mail: wangy@mail.ipc.ac.cn

b Key Laboratory of Photochemical Conversion and Optoelectronic Materials and CityU-CAS Joint Laboratory of Functional Materials and Devices, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, China

c University of Chinese Academy of Sciences, Beijing, China

d College of Life Science and Technology, University of Chemical Technology, Beijing, China

Abstract

Carbon nano-dots were synthesized by a hydrothermal method and integrated into the poly(vinyl alcohol) matrix as charge carrier trapping centers for nonvolatile memory devices. The devices with the configuration of ITO/carbon nano-dots-PVA/Ag exhibited bistable electrical switching at low voltage, long retention time and excellent reading stability.

Graphical abstract: Nonvolatile memory devices based on carbon nano-dot doped poly(vinyl alcohol) composites with low operation voltage and high ON/OFF ratio

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Article information

DOI
https://doi.org/10.1039/C4RA16563B
Article type
Communication
Submitted
17 Dec 2014
Accepted
06 Mar 2015
First published
06 Mar 2015

RSC Adv., 2015,5, 26886-26890

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Nonvolatile memory devices based on carbon nano-dot doped poly(vinyl alcohol) composites with low operation voltage and high ON/OFF ratio

L. Meng, M. Lan, L. Guo, L. Xie, Hui Wang, J. Ge, W. Liu, Y. Wang and P. Wang, RSC Adv., 2015, 5, 26886 DOI: 10.1039/C4RA16563B

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