Issue 55, 2015
From the journal:

RSC Advances

251 fs pulse generation with a Nd3+-doped Ca3Gd2(BO3)4 disordered crystal

Zhongben Pan,†a   Jie Ma,†b   Honghao Xu,c   Dingyuan Tang,d   Huaqiang Cai,*a   Haohai Yu,e   Huaijin Zhang*e  and  Jiyang Wange  

* Corresponding authors

a Key Laboratory of Science and Technology on High Energy Laser, Institute of Chemical Materials and Advanced Materials Center, China Academy of Engineering Physics, Mianyang 621900, China
E-mail: danluxiusan@126.com

b Department of Chemistry and Graphene Research Centre, National University of Singapore, Singapore 117543, Singapore

c College of Physics, Qingdao University, Qingdao 266071, China

d School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore

e State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, China
E-mail: huaijinzhang@sdu.edu.cn

Abstract

A diode-pumped passively mode-locked femtosecond Nd:Ca3Gd2(BO3)4 disordered crystal laser has been investigated for the first time, to our knowledge. The passive mode locking of the laser is initiated with a semiconductor saturable absorption mirror (SESAM). Stable mode-locked pulses with 251 fs pulse width, 87 MHz repetition rate, and 37 mW average output power have been demonstrated.

Graphical abstract: 251 fs pulse generation with a Nd3+-doped Ca3Gd2(BO3)4 disordered crystal

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Article information

DOI
https://doi.org/10.1039/C5RA04720J
Article type
Paper
Submitted
17 Mar 2015
Accepted
11 May 2015
First published
11 May 2015

RSC Adv., 2015,5, 44137-44141

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251 fs pulse generation with a Nd3+-doped Ca3Gd2(BO3)4 disordered crystal

Z. Pan, J. Ma, H. Xu, D. Tang, H. Cai, H. Yu, H. Zhang and J. Wang, RSC Adv., 2015, 5, 44137 DOI: 10.1039/C5RA04720J

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