c-Si solar cells and Si n-MOSFETs prepared by ICP assisted hot wire implantation doping

Abstract

In this work, ICP-assisted hot wire implantation doping was carried out to fabricate c-Si solar cells. The obtained junction depth obtained was around 70 nm and the carrier concentration of the phosphorus was approximately 9.34 × 10²⁰ cm⁻³. The efficiency of the fabricated SiN_x/textured c-Si photovoltaic device was 16.08%. ICP-assisted hot wire implantation doping was also utilized to prepare Si n-MOSFETs. Experimental results indicate that the sub-threshold slope and on-off current ratio of the Si n-MOSFETs were about 0.39 V decade⁻¹ and over 10⁴, respectively.