High brightness turquoise light-emitting diodes based on ZnO microwires

Abstract

ZnO microwire clusters have been fabricated by a chemical vapor deposition method on copper foil. Bright green luminescence was obtained when the sample was excited by an ultraviolet lamp. The mechanism of green luminescence and the relationship of point defect with emission were analyzed in detail. The quantum yield of green emission is 31%. Light emitting diodes were prepared based on ZnO microwires with a p-GaN or n-GaN film heterojunction. High brightness turquoise emission was obtained and the mechanism is discussed in this paper.