Issue 128, 2015
From the journal:

RSC Advances

All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator†

Jin-Yong Hong,a   Dai Gun Yoon,b   Byung Doo Chin*b  and  Sung Hyun Kim*c  

* Corresponding authors

a Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, USA

b Department of Polymer Science and Engineering, Dankook University, Youngin 448-701, Republic of Korea
E-mail: bdchin@dankook.ac.kr

c Department of Chemistry, College of Natural Sciences, Seoul National University, Seoul 151-747, Republic of Korea
E-mail: shkim75@snu.ac.kr

Abstract

Polyaniline (PANI)/pentaerythritol triacrylate (PETA) as gate/gate insulator is introduced to improve the device performance for all-solution-processed organic thin film transistors (TFTs). Direct comparison of the TIPS-pentacene crystal growth patterns on PANI/PETA and on Si/SiO2 as gate/gate insulators is investigated for the origin of different device performances.

Graphical abstract: All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator

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Article information

DOI
https://doi.org/10.1039/C5RA23848J
Article type
Communication
Submitted
11 Nov 2015
Accepted
07 Dec 2015
First published
09 Dec 2015

RSC Adv., 2015,5, 105785-105788

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All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator

J. Hong, D. G. Yoon, B. D. Chin and S. H. Kim, RSC Adv., 2015, 5, 105785 DOI: 10.1039/C5RA23848J

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