Issue 73, 2015
From the journal:

RSC Advances

Correction: High-k double gate junctionless tunnel FET with a tunable bandgap

Shiromani Balmukund Rahi*a  and  Bahniman Ghoshb  

* Corresponding authors

a Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur-208016, India
E-mail: sbrahi@iitk.ac.in

b Microelectronics Research Center, University of Texas at Austin, Austin-78758, USA
E-mail: bghosh@utexas.edu

Abstract

Correction for ‘High-k double gate junctionless tunnel FET with a tunable bandgap’ by Shiromani Balmukund Rahi et al., RSC Adv., 2015, 5, 54544–54550.

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Article information

DOI
https://doi.org/10.1039/C5RA90067K
Article type
Correction
Submitted
06 Jul 2015
Accepted
06 Jul 2015
First published
09 Jul 2015
This article is Open Access
Creative Commons BY license

RSC Adv., 2015,5, 59665-59665

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Correction: High-k double gate junctionless tunnel FET with a tunable bandgap

S. B. Rahi and B. Ghosh, RSC Adv., 2015, 5, 59665 DOI: 10.1039/C5RA90067K

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