Enhanced stability of the HfO2 electrolyte and reduced working voltage of a CB-RAM by an ionic liquid

A. Harada; H. Yamaoka; R. Ogata; K. Watanabe; K. Kinoshita; S. Kishida; T. Nokami; T. Itoh

doi:10.1039/C5TC01127B

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Enhanced stability of the HfO₂ electrolyte and reduced working voltage of a CB-RAM by an ionic liquid†

A. Harada,^a H. Yamaoka,^a R. Ogata,^b K. Watanabe,^b K. Kinoshita,*^b S. Kishida,^b T. Nokami

^ac and T. Itoh*^ac

Author affiliations

* Corresponding authors

^a Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University, Japan
E-mail: titoh@chem.tottori-u.ac.jp

^b Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-minami, Tottori 680-8552, Japan
E-mail: kinoshita@ele.tottori-u.ac.jp

^c Center for Research on Green Sustainable Chemistry, Graduate School of Engineering, Tottori University, Japan

Abstract

Supplying a trace volume of ionic liquid, [bmim][Tf₂N], which contains 5000 ppm of H₂O, on the HfO₂ film in the conducting-bridge random access memory composed of Cu/HfO₂/Pt allows improved efficiency of the memory properties: reduction of operating voltage and prevention of destruction of the electrolyte.

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Article information

DOI: https://doi.org/10.1039/C5TC01127B
Article type: Communication
Submitted: 21 Apr 2015
Accepted: 29 May 2015
First published: 01 Jun 2015

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J. Mater. Chem. C, 2015,3, 6966-6969

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Enhanced stability of the HfO₂ electrolyte and reduced working voltage of a CB-RAM by an ionic liquid

A. Harada, H. Yamaoka, R. Ogata, K. Watanabe, K. Kinoshita, S. Kishida, T. Nokami and T. Itoh, J. Mater. Chem. C, 2015, 3, 6966 DOI: 10.1039/C5TC01127B

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Journal of Materials Chemistry C