Iodide surface decoration: a facile and efficacious approach to modulating the band energy level of semiconductors for high-performance visible-light photocatalysis†
Abstract
We herein report a facile and general approach to modulating the band energy level of semiconductors for visible-light photocatalysis via iodide surface decoration. This strategy enables the wide-band-gap Bi2O2CO3 to possess a continuously tunable band gap and profoundly boosted visible-light photocatalytic performance for dye degradation and NO removal.