High-performance n-type field-effect transistors based on a highly crystalline tricyanovinyldihydrofuran derivative†
Abstract
We propose a novel tricyanovinyldihydrofuran (TCF)-based molecule called DBOB-DTCF that is designed and synthesized for application in n-type field-effect transistors (FETs). It can be operated in a stable manner under ambient conditions. DBOB-DTCF is successfully fabricated as crystalline microplates (CMs) because of its capability of self-assembly. A high electron mobility of ∼1.9 cm2 V−1 s−1 is observed for a CM-based FET, measured under ambient conditions. This suggests that TCF is an excellent acceptor unit that organizes air stable n-type organic semiconductors.