Issue 22, 2016

Amorphous ZnO based resistive random access memory

Abstract

Amorphous zinc oxide (a-ZnO) based resistive random access memory (RRAM) Ag/a-ZnO/Pt devices were fabricated and their resistive switching characteristics investigated. The Ag/a-ZnO/Pt RRAMs exhibit typical bipolar resistive switching features with the resistance ratio of high to low resistance states (HRS/LRS) more than 107. Detailed current–voltage I–V characteristic analysis suggests that the conduction mechanism in the low resistance state is due to the formation of metallic filaments. Schottky emission is proven to be the dominant conduction mechanism in the high resistance state which results from the Schottky contacts between the metal electrodes and ZnO. The Ag/a-ZnO/Pt devices also show excellent retention performance. These results suggest promising application potentials for Ag/a-ZnO/Pt RRAMs.

Graphical abstract: Amorphous ZnO based resistive random access memory

Article information

Article type
Paper
Submitted
29 Oct 2015
Accepted
25 Jan 2016
First published
27 Jan 2016

RSC Adv., 2016,6, 17867-17872

Author version available

Amorphous ZnO based resistive random access memory

Y. Huang, Z. Shen, Y. Wu, X. Wang, S. Zhang, X. Shi and H. Zeng, RSC Adv., 2016, 6, 17867 DOI: 10.1039/C5RA22728C

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