Issue 76, 2016, Issue in Progress

High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing

Abstract

In this work, all-solution processed, multi-layer yellow quantum dot light emitting diodes (QLEDs), consisting of a hole transport layer of poly(9-vinylcarbazole), emissive layer of CuInS2/ZnS (ZCIS) QDs, and electron transport layer of ZnO nanoparticles, are fabricated. To improve the carrier-balance in QLEDs, a ligand-exchange strategy is employed to replace n-dodecanethiol that caps the surface of CuInS2/ZnS quantum dots with 2-ethylhexanethiol. After this processing, improvement of current efficiency and external quantum efficiency of QLEDs is achieved. The optimized diodes exhibit a maximum luminance of 2354 cd m−2 and an external quantum efficiency of 0.63%, together with a lower turn-on voltage (decreases from 3.1 V to 2.7 V) using these ligand-exchanged QDs as emitting materials. Furthermore, CuInS2-based QLEDs in our study exhibit color retainability with increasing voltage and prolonged use, and show great promise for practical application.

Graphical abstract: High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing

Supplementary files

Article information

Article type
Paper
Submitted
01 Jun 2016
Accepted
11 Jul 2016
First published
14 Jul 2016

RSC Adv., 2016,6, 72462-72470

High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing

J. Li, H. Jin, K. Wang, D. Xie, D. Xu, X. Xu and G. Xu, RSC Adv., 2016, 6, 72462 DOI: 10.1039/C6RA14241A

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