Zinc and linkage effects of novel porphyrin-containing polyimides on resistor memory behaviors

Abstract

A new class of porphyrin-containing polyimides, ZnPor-s-DSDA, ZnPor-t-DSDA, Por-s-DSDA and Por-t-DSDA, were synthesized from porphyrin-containing diamines and 3,3′,4,4′-diphenylsulfone tetracarboxylic dianhydride for resistor-type memory applications. The effect of the linkage and zinc metal was investigated by electrochemistry, molecular simulations, and memory behaviors. The memory devices with different retention times derived from polymers ZnPor-s-DSDA (WORM, >3 h) and ZnPor-t-DSDA (DRAM, 30 s) demonstrated the importance of the linkage effect, and the insulation property of polyimides Por-s-DSDA and Por-t-DSDA also implies a crucial memory behavior by metal chelation.