[Ir(ppy)2pyim]PF6 dielectric mixed with PMMA for area emission transistors

Jing Li; Wenhai Li; Dongxin Ma; Weiqi Zhang; Lei He; Lian Duan; Liduo Wang; Guifang Dong

doi:10.1039/C6RA22052E

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[Ir(ppy)₂pyim]PF₆ dielectric mixed with PMMA for area emission transistors†

Jing Li,‡^a Wenhai Li,‡^a Dongxin Ma,^a Weiqi Zhang,^a Lei He,^b Lian Duan,^a Liduo Wang^a and Guifang Dong*^a

Author affiliations

* Corresponding authors

^a Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, P. R. China
E-mail: donggf@mail.tsinghua.edu.cn

^b College of Chemistry and Chemical Engineering, Central South University, Changsha, Hunan Province 410083, P. R. China

Abstract

We demonstrated an area emission transistor with [Ir(ppy)₂pyim]PF₆/PMMA as the dielectric layer. The brightness can be tuned by V_DS and V_GS, respectively. The device performance was optimized by adjusting the mass concentration ratios of PMMA. Different working mechanisms of the devices with and without PMMA were investigated through the Kelvin probe force microscope. The doping of PMMA will change the surface potential of [Ir(ppy)₂pyim]PF₆, and then change the properties of charge injection. Our research may open up a new way for the development of multifunctional devices.

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Article information

DOI: https://doi.org/10.1039/C6RA22052E
Article type: Communication
Submitted: 02 Sep 2016
Accepted: 27 Sep 2016
First published: 27 Sep 2016

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RSC Adv., 2016,6, 94010-94013

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[Ir(ppy)₂pyim]PF₆ dielectric mixed with PMMA for area emission transistors

J. Li, W. Li, D. Ma, W. Zhang, L. He, L. Duan, L. Wang and G. Dong, RSC Adv., 2016, 6, 94010 DOI: 10.1039/C6RA22052E

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