Issue 8, 2016

Effects of heteroatom substitution in spiro-bifluorene hole transport materials

Abstract

Three new spirofluorene-based hole transport materials, Spiro-S, Spiro-N, and Spiro-E, are synthesized by replacing the para-methoxy substituent in 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (Spiro-MeOTAD) with methylsulfanyl, N,N-dimethylamino and ethyl groups. Their properties as hole transport materials in perovskite solar cells are investigated. The impact of replacing the para-methoxy substituent on bulk properties, such as the photophysical properties, HOMO/LUMO energy level, hole extraction properties and morphologies of perovskite thin films are investigated. Their optoelectronic and charge-transport properties and performance in perovskite solar cells are compared with the current benchmarked and structurally-related hole transport material (HTM) Spiro-MeOTAD. Surprisingly, the methylsulfanyl substituted spirofluorene shows the highest power conversion efficiency of 15.92% among the investigated spirofluorenes, which is an over 38% increase in PCE compared with that of Spiro-MeOTAD under similar device fabrication conditions.

Graphical abstract: Effects of heteroatom substitution in spiro-bifluorene hole transport materials

Supplementary files

Article information

Article type
Edge Article
Submitted
02 Mar 2016
Accepted
01 May 2016
First published
03 May 2016
This article is Open Access

All publication charges for this article have been paid for by the Royal Society of Chemistry
Creative Commons BY license

Chem. Sci., 2016,7, 5007-5012

Effects of heteroatom substitution in spiro-bifluorene hole transport materials

Z. Hu, W. Fu, L. Yan, J. Miao, H. Yu, Y. He, O. Goto, H. Meng, H. Chen and W. Huang, Chem. Sci., 2016, 7, 5007 DOI: 10.1039/C6SC00973E

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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