Issue 3, 2016

Color-tunable photoluminescence of Cu-doped Zn–In–Se quantum dots and their electroluminescence properties

Abstract

Recently, Cu-doped ternary chalcogenide quantum dots (QDs) have attracted extensive attention due to their large Stokes shift and tunable photoluminescence (PL) behavior in the visible and near-infrared (NIR) spectral range, and particularly for their remarkably lower toxicity than their Cd-based counterparts. However, there still remain material- and fabrication-related obstacles in realizing high-performance Cu-doped QDs, which limit their promising applications in light-emitting devices and bio-labeling. In the present study, we report the facile synthesis of high-qualified Cu-doped Zn–In–Se QDs via a hot injection approach, using a heterogeneous dispersion of Se in octadecene (ODE) as a “green” Se precursor. With variation of the ratios of Zn to In, the obtained Cu-doped Zn–In–Se QDs exhibited composition-tunable PL emissions over the most visible spectral window (ca. 565–710 nm) with a PL quantum yield (QY) up to 38% after coating ZnSe shells, which is the highest one ever reported in this system. Furthermore, we report, for the first time, the exploration of QD light-emitting diodes (QD-LEDs) based on the Cu-doped Zn–In–Se QDs as the active layer, which had a maximum luminance of 320 cd m−2 and a luminous efficiency (LE) of 0.97 cd A−1 (at 98 cd m−2), suggesting their promising potential for application in optoelectronic devices.

Graphical abstract: Color-tunable photoluminescence of Cu-doped Zn–In–Se quantum dots and their electroluminescence properties

Supplementary files

Article information

Article type
Paper
Submitted
28 Nov 2015
Accepted
07 Dec 2015
First published
07 Dec 2015

J. Mater. Chem. C, 2016,4, 581-588

Color-tunable photoluminescence of Cu-doped Zn–In–Se quantum dots and their electroluminescence properties

S. Cao, W. Ji, J. Zhao, W. Yang, C. Li and J. Zheng, J. Mater. Chem. C, 2016, 4, 581 DOI: 10.1039/C5TC04019A

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