Microstructure variations induced by excess PbX2 or AX within perovskite thin films

Guanhaojie Zheng; Cheng Zhu; Yihua Chen; Juchen Zhang; Qi Chen; Xingyu Gao; Huanping Zhou

doi:10.1039/C7CC07534K

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Microstructure variations induced by excess PbX₂ or AX within perovskite thin films†

Guanhaojie Zheng,^abc Cheng Zhu,^d Yihua Chen,^c Juchen Zhang,^c Qi Chen,

^d Xingyu Gao*^ab and Huanping Zhou

*^c

Author affiliations

* Corresponding authors

^a Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics Chinese Academy of Sciences, Shanghai 201204, China
E-mail: gaoxingyu@sinap.ac.cn

^b University of Chinese Academy of Sciences, Beijing 100049, P. R. China

^c Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
E-mail: happy_zhou@pku.edu.cn

^d Department of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, P. R. China

Abstract

We systematically investigated the impact of stoichiometric ratio variation between PbX₂ and AX on hybrid perovskite films from the perspective of microstructure, especially on the plane stacking directions, using the two-dimensional synchrotron radiation grazing incidence wide-angle X-ray scattering (GIWAXS) technique. The tuned crystal plane stacking in perovskite films can consequently enlighten further explorations about the relationship between microstructure and solar cell performance.

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Article information

DOI: https://doi.org/10.1039/C7CC07534K
Article type: Communication
Submitted: 27 Sep 2017
Accepted: 06 Nov 2017
First published: 06 Nov 2017

Download Citation

Chem. Commun., 2017,53, 12966-12969

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Microstructure variations induced by excess PbX₂ or AX within perovskite thin films

G. Zheng, C. Zhu, Y. Chen, J. Zhang, Q. Chen, X. Gao and H. Zhou, Chem. Commun., 2017, 53, 12966 DOI: 10.1039/C7CC07534K

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