A graphene barristor using nitrogen profile controlled ZnO Schottky contacts

Abstract

We have successfully demonstrated a graphene–ZnO:N Schottky barristor. The barrier height between graphene and ZnO:N could be modulated by a buried gate electrode in the range of 0.5–0.73 eV, and an on–off ratio of up to 10⁷ was achieved. By using a nitrogen-doped ZnO film as a Schottky contact material, the stability problem of previously reported graphene barristors could be greatly alleviated and a facile route to build a top-down processed graphene barristor was realized with a very low heat cycle. This device will be instrumental when implementing logic functions in systems requiring high-performance logic devices fabricated with a low temperature fabrication process such as back-end integrated logic devices or flexible devices on soft substrates.