Issue 32, 2017
From the journal:

Nanoscale

Correction: First-principles prediction on bismuthylene monolayer as a promising quantum spin Hall insulator

Run-Wu Zhang,abc   Chang-Wen Zhang,*b   Wei-Xiao Ji,b   Shi-Shen Yand  and  Yu-Gui Yao*a  

* Corresponding authors

a Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
E-mail: ygyao@bit.edu.cn

b School of Physics and Technology, University of Jinan, Jinan, Shandong, China
E-mail: ss_zhangchw@ujn.edu.cn

c China Academy of Engineering Physics, Mianyang, Sichuan, China

d School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong, China

Abstract

Correction for ‘First-principles prediction on bismuthylene monolayer as a promising quantum spin Hall insulator’ by Run-Wu Zhang, et al., Nanoscale, 2017, 9, 8207–8212.

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Article information

DOI
https://doi.org/10.1039/C7NR90157G
Article type
Correction
Submitted
24 Jul 2017
Accepted
24 Jul 2017
First published
03 Aug 2017
This article is Open Access
Creative Commons BY license

Nanoscale, 2017,9, 11814-11815

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Correction: First-principles prediction on bismuthylene monolayer as a promising quantum spin Hall insulator

R. Zhang, C. Zhang, W. Ji, S. Yan and Y. Yao, Nanoscale, 2017, 9, 11814 DOI: 10.1039/C7NR90157G

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