The electronic properties of the stanene/MoS2 heterostructure under strain

Abstract

The effect of a MoS₂ substrate on the structural and electronic properties of stanene were systematically investigated by first-principles calculations. The Brillouin zone of isolated stanene has a Dirac cone at the K point. MoS₂ helps to open an energy gap at the K point, whereas contributes no additional transport channels near the Fermi level. Our results suggest that the carrier mobility remains large, which makes the stanene/MoS₂ heterostructure a competitive material for electronic applications. Subsequently, strain engineering study by changing the interlayer spacing between stanene and MoS₂ layer and changing lattice constants indicates that the energy gap at K point can be effectively tuned to meet the demands of experiments and device design in nanoelectronics. Moreover, a large enough strain leads to a metal–semiconductor phase transition to make the intrinsic semiconductor turn into self-doping phase. Our study indicates that MoS₂ is a good substrate to promote the development of Sn-based nanoelectronics.