Issue 43, 2017, Issue in Progress

Insights into the role of the interface defects density and the bandgap of the back surface field for efficient p-type silicon heterojunction solar cells

Abstract

An n-type silicon wafer appears to be an excellent base material for high efficiency silicon heterojunction solar cells with high annual energy output. The further development of viable p-wafer cells would open many industrial photovoltaic options. Here, the role of the interface defects density and the bandgap of the back surface field of p-type silicon heterojunction solar cells have been investigated in detail to provide guidelines for achieving high performance. The result indicates that the output characteristics of the heterojunction solar cells are sensitive to the density of interface defects (Dit) at both sides of the c-Si surface. However, the output parameters primarily affected by Dit at the front and rear side are not identical. Back surface field (BSF), which aims to reduce photo-generated carriers' recombination at the rear interface, has also been optimized by adjusting the bandgap to improve the collection efficiency. Finally, based on experimental results, we propose that the conversion efficiency of p-type silicon heterojunction solar cells could be increased beyond 23% by efficiently regulating the bifacial Dit and the bandgap of the BSF layer.

Graphical abstract: Insights into the role of the interface defects density and the bandgap of the back surface field for efficient p-type silicon heterojunction solar cells

Supplementary files

Article information

Article type
Paper
Submitted
09 Apr 2017
Accepted
14 May 2017
First published
19 May 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 26776-26782

Insights into the role of the interface defects density and the bandgap of the back surface field for efficient p-type silicon heterojunction solar cells

F. Wang, Y. Gao, Z. Pang, L. Yang and J. Yang, RSC Adv., 2017, 7, 26776 DOI: 10.1039/C7RA04018K

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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