Toward fast growth of large area high quality graphene using a cold-wall CVD reactor

Abstract

In this work we provide a detailed analysis on graphene synthesis by Chemical Vapor Deposition (CVD) using a cold wall CVD reactor to achieve fast production of large area high quality graphene. Using Raman spectroscopy and mapping, the effect of growth temperature, pressure and CH₄ : H₂ ratio have been analyzed. The results show that graphene synthesis at high temperature results in reducing the multilayer nucleation density. At a high temperature of 1060 °C, the density of multilayer graphene was reduced by more than 50%. In addition, our analysis revealed that the chamber pressure plays a major role in reducing the multilayer region formation and controlling the grain size of graphene. At 15 mbar, high quality graphene with a large grain size greater than 5 μm is achieved. Moreover, the hydrogen to methane ratio has a significant role in determining the morphology and the size of graphene domains. Our analysis provide guidelines toward the synthesis of high quality graphene using 4′′ cold wall CVD reactor that are beneficial for the large scale production of graphene.