The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors

Abstract

We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In₂O₃ and isotype In₂O₃/ZnO heterojunction transistors. Through careful optimisation of the material deposition and annealing conditions we demonstrate remarkable enhancement in the electron mobility of In₂O₃/ZnO heterojunction transistors, as compared to single layer In₂O₃ devices, with a maximum value of 48 cm² V⁻¹ s⁻¹.