Issue 3, 2018
From the journal:

CrystEngComm

Oriented UiO-66 thin films through solution shearing†

Arian Ghorbanpour,a   Luke D. Huelsenbeck,a   Detlef-M. Smilgiesb  and  Gaurav Giri ORCID logo *a  

* Corresponding authors

a Department of Chemical Engineering, University of Virginia, Charlottesville, VA 22904, USA
E-mail: gg3qd@virginia.edu
Tel: +1 434 924 1351

b Cornell High Energy Synchrotron Source (CHESS), Ithaca, NY 14853, USA

Abstract

Here, we discuss the fabrication of oriented films of UiO-66 crystals via the solution shearing based deposition of the crystal suspension over functionalized silicon substrates. UiO-66 particle size and morphology as well as the solvent in which the particles are suspended impact the degree of crystal orientation.

Graphical abstract: Oriented UiO-66 thin films through solution shearing

About
Cited by
Related
Download options Please wait...

Supplementary files

Article information

DOI
https://doi.org/10.1039/C7CE01801K
Article type
Paper
Submitted
15 Oct 2017
Accepted
08 Dec 2017
First published
08 Dec 2017

CrystEngComm, 2018,20, 294-300

Permissions

Request permissions

Oriented UiO-66 thin films through solution shearing

A. Ghorbanpour, L. D. Huelsenbeck, Detlef-M. Smilgies and G. Giri, CrystEngComm, 2018, 20, 294 DOI: 10.1039/C7CE01801K

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements