Native defect-assisted enhanced response to CH4 near room temperature by Al0.07Ga0.93N nanowires

Abstract

Gas sensors at low operating temperature with high sensitivity require group III nitrides owing to their high chemical and thermal stabilities. For the first time, Al_0.07Ga_0.93N nanowires (NWs) have been utilized in CH₄ sensing, and it has been demonstrated that they exhibit an improved response compared to GaN NWs at the low operating temperature of 50 °C. Al_0.07Ga_0.93N NWs have been synthesized via the ion beam mixing process using inert gas ion irradiation on the bilayer of Al/GaN NWs. The sensing mechanism is explained with the help of native defects present in the system. The number of shallow acceptors created by Ga vacancies (V_Ga) is found to be higher in Al_0.07Ga_0.93N NWs than in as-grown GaN NWs. The role of the O antisite defect (O_N) for the formation of shallow V_Ga is inferred from photoluminescence spectroscopic analysis. These native defects strongly influence the gas sensing behaviour, which results in enhanced and low-temperature CH₄ sensing.