Issue 46, 2018

Janus monolayer of WSeTe, a new structural phase transition material driven by electrostatic gating

Abstract

Phase transition materials are widely exploited in sensors, switches, and information storage devices. However, the dynamic control of structural phase transitions in low-dimensional materials is rarely reported, except for the recent demonstration of semiconductor–semimetal transition in monolayer MoTe2 modulated by electrostatic gating. Here, based on density functional theory calculations we screen in the Janus family of transition metal dichalcogenides, MXY where M = Mo or W, X/Y = S, Se, or Te, for new two-dimensional phase transition materials. We find that the Janus monolayer of WSeTe undergoes reversible phase transitions modulated by electrostatic gating, owing to the small energy difference between H and T′ phases, ET′EH = 48 meV. The gate voltage of 2.0 V (with high dielectric gating the injected charge is ∼1013 cm−2) is required to trigger the semiconductor–semimetal transition in WSeTe. The kinetic barrier for both forward and backward phase transitions is ∼0.66 eV, which is significantly lower than that in MoTe2, leading to three orders of magnitude increase in the transition rate and much more rapid response of devices.

Graphical abstract: Janus monolayer of WSeTe, a new structural phase transition material driven by electrostatic gating

Supplementary files

Article information

Article type
Communication
Submitted
09 Oct 2018
Accepted
03 Nov 2018
First published
05 Nov 2018

Nanoscale, 2018,10, 21629-21633

Janus monolayer of WSeTe, a new structural phase transition material driven by electrostatic gating

Y. Sun, Z. Shuai and D. Wang, Nanoscale, 2018, 10, 21629 DOI: 10.1039/C8NR08151D

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements