Bending effect on the resistive switching behavior of a NiO/TiO2 p–n heterojunction

Abstract

Herein, NiO/TiO₂ heterojunctions were fabricated by sol–gel spin coating on plastic substrates to investigate the effects of bending on resistive switching. The switching mechanism is well explained by the formation and rupture of oxygen-vacancy conducting filaments modulated by the p–n interface. Compared with that of the unbent film, the device ON/OFF ratio is slightly improved after 5000 bending repetitions. Finite element calculations indicate that the tensile stress of 0.79% can lead to the formation of channel cracks. Further charge transport analysis shows that the conducting filaments may cause an incomplete rupture because the bending-induced channel crack permeates through the p–n interface and reduces the local depletion-region width.