Issue 65, 2018

Nano-imprinting of refractive-index-matched indium tin oxide sol–gel in light-emitting diodes for eliminating total internal reflection

Abstract

Refractive-index (RI)-matched nanostructures are implemented in GaN-based light-emitting diodes (LEDs) for enhancing light output efficiency. The RI-matched indium tin oxide (ITO) nanostructures are successfully implemented in GaN-based lateral LEDs by using ITO sol–gel and nanoimprint lithography. The ITO sol–gel nanostructures annealed at 300 °C have RI of 1.95, showing high transparency of 90% and high diffused transmittance of 34%. Consequently, the light output power in LEDs with the RI-matched nanostructures increases by 8% in comparison with that in LEDs containing flat ITO. Ray tracing and finite-difference time-domain (FDTD) simulations show that the RI-matched nanostructures on the transparent current spreading layer dramatically reduce Fresnel reflection loss at the interface of the current spreading layer with the nanostructure and extract confined waveguide lights in LEDs.

Graphical abstract: Nano-imprinting of refractive-index-matched indium tin oxide sol–gel in light-emitting diodes for eliminating total internal reflection

Supplementary files

Article information

Article type
Paper
Submitted
12 Aug 2018
Accepted
20 Oct 2018
First published
01 Nov 2018
This article is Open Access
Creative Commons BY license

RSC Adv., 2018,8, 37021-37027

Nano-imprinting of refractive-index-matched indium tin oxide sol–gel in light-emitting diodes for eliminating total internal reflection

S. Kim, C. J. Yoo, J. Y. Park, S. Baek, W. S. Cho and J. Lee, RSC Adv., 2018, 8, 37021 DOI: 10.1039/C8RA06773B

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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