Activation of a particulate Ta3N5 water-oxidation photoanode with a GaN hole-blocking layer†
Abstract
Particulate Ta3N5, a material that responds to visible light for photoelectrochemical O2 evolution, was glued to a metallic GaN conducting layer. The electrode was able to oxidize water with 1.8-fold higher efficiency than that without GaN. The GaN layer blocked the hole current from Ta3N5 to the back-contact metal layer and prevented hole–electron recombination.