Issue 13, 2018

High performance solution processed oxide thin-film transistors with inkjet printed Ag source–drain electrodes

Abstract

This letter reports the fabrication of inkjet-printed thin-film transistor devices employing an electron transport layer incorporating polyethyleneimine for engineering of the interface between In2O3 semiconductor and Ag source/drain contacts, resulting in significant enhancement of saturation mobility by two orders of magnitude, from ∼0.03 cm2 (V s)−1 to ∼3.0 cm2 (V s)−1. The improvement is assigned to the lowered contact resistance between the source/drain electrodes and the underlying layers. The results are of importance for fully-printed oxide TFTs and circuits.

Graphical abstract: High performance solution processed oxide thin-film transistors with inkjet printed Ag source–drain electrodes

Supplementary files

Article information

Article type
Communication
Submitted
11 Dec 2017
Accepted
12 Mar 2018
First published
13 Mar 2018

J. Mater. Chem. C, 2018,6, 3220-3225

High performance solution processed oxide thin-film transistors with inkjet printed Ag source–drain electrodes

L. Gillan, J. Leppäniemi, K. Eiroma, H. Majumdar and A. Alastalo, J. Mater. Chem. C, 2018, 6, 3220 DOI: 10.1039/C7TC05679F

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