Threshold magnetoresistance in anistropic magnetic 2D transition metal dichalcogenides

Hongjun Xu; Ming-Chien Hsu; Huei-Ru Fuh; Jiafeng Feng; Xiufeng Han; Yanfeng Zhao; Duan Zhang; Xinming Wang; Fang Liu; Huajun Liu; Jiung Cho; Miri Choi; Byong Sun Chun; Cormac Ó Coileáin; Zhi Wang; Mansoor B. A. Jalil; Han-Chun Wu; Ching-Ray Chang

doi:10.1039/C7TC05769E

Threshold magnetoresistance in anistropic magnetic 2D transition metal dichalcogenides†

Hongjun Xu,

‡^abc Ming-Chien Hsu,‡^de Huei-Ru Fuh,‡^df Jiafeng Feng,‡^g Xiufeng Han,^g Yanfeng Zhao,^abc Duan Zhang,^abc Xinming Wang,^h Fang Liu,ⁱ Huajun Liu,ⁱ Jiung Cho,^j Miri Choi,^k Byong Sun Chun,^l Cormac Ó Coileáin,^abc Zhi Wang,^abc Mansoor B. A. Jalil,^e Han-Chun Wu

*^abc and Ching-Ray Chang*^d

Author affiliations

* Corresponding authors

^a School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
E-mail: wuhc@bit.edu.cn

^b Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China

^c Micro-nano Center, Beijing Institute of Technology, Beijing 100081, P. R. China

^d Department of Physics and Institute of Applied Physics, National Taiwan University, Taipei, Taiwan
E-mail: crchang@phys.ntu.edu.tw

^e Department of Electrical and Computer Engineering, National University of Singapore, Singapore

^f Department of Chemical Engineering & Materials Science, Yuan Ze University, Taoyuan City 320, Taiwan

^g Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China

^h Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, P. R. China

ⁱ Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, P. R. China

^j Western Seoul Center, Korea Basic Science Institute, Seoul 03579, Republic of Korea

^k Chuncheon Center, Korea Basic Science Institute, Chuncheon 24341, Republic of Korea

^l Division of Industrial Metrology, Korea Research Institute of Standards and Science, Daejeon 305-340, Republic of Korea

Abstract

Recently many novel magnetoresistance (MR) phenomena have been reported from studies of two dimensional (2D) materials. Here, we report on the exotic transport behavior of VS₂. A large negative and quadratic MR of −10% is observed for an in-plane magnetic field B up to 14 T. Remarkably, when the applied field deviates from the in-plane orientation there is a threshold field, B_c, and the MR shows a plateau of near zero MR. When B < B_c, only a single state exists and the transition between quantum spin states is forbidden. Our work sheds new light on the MR of magnetic 2D materials with localized states and may spur further investigations.

Journal of Materials Chemistry C

Threshold magnetoresistance in anistropic magnetic 2D transition metal dichalcogenides†

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Threshold magnetoresistance in anistropic magnetic 2D transition metal dichalcogenides

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