Issue 15, 2018

Electronic structures of layered Ta2NiS5 single crystals revealed by high-resolution angle-resolved photoemission spectroscopy

Abstract

Using high-resolution angle-resolved photoemission spectroscopy (ARPES), we systematically studied the electronic structures of quasi-one-dimensional (1D) ternary material Ta2NiS5 single crystals. Contrary to its sister compound Ta2NiSe5, which is a candidate material for excitonic insulators, we found that Ta2NiS5 cannot realize the ground state of an excitonic insulator according to temperature-dependent valence band dispersions along the ΓX direction. In particular, the experimental ARPES data reveal that the electronic structures show strong two-dimensional characteristics along with a considerable in-plane anisotropy indicating evident coupling among the one-dimensional chain structures. Moreover, theoretical band calculations have to be compressed by a factor of about 15% in energy in order to match the experimental band structures, implying that some weak electron correlations are neglected in the band calculations.

Graphical abstract: Electronic structures of layered Ta2NiS5 single crystals revealed by high-resolution angle-resolved photoemission spectroscopy

Article information

Article type
Paper
Submitted
10 Jan 2018
Accepted
26 Feb 2018
First published
21 Mar 2018

J. Mater. Chem. C, 2018,6, 3976-3981

Electronic structures of layered Ta2NiS5 single crystals revealed by high-resolution angle-resolved photoemission spectroscopy

K. Mu, H. Chen, Y. Li, Y. Zhang, P. Wang, B. Zhang, Y. Liu, G. Zhang, L. Song and Z. Sun, J. Mater. Chem. C, 2018, 6, 3976 DOI: 10.1039/C8TC00149A

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