Two-step epitaxial growth of NbON (100) thin films on rutile-type TiO2 (101) substrates and reduction of residual carrier concentration by RF reactive sputtering

Abstract

We demonstrate here the epitaxial growth of NbON (100) films on rutile-type TiO₂ (101) substrates. By the application of a 2-step growth method, we successfully minimized anion-related defects in the NbON films and reduced the residual carrier concentration by lowering the growth temperature.