Issue 1, 2019
From the journal:

Nanoscale

Correction: Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition

Sushil Kumar Pandey,a   Hussain Alsalman,ab   Javad G. Azadani,a   Nezhueyotl Izquierdo,a   Tony Lowa  and  Stephen A. Campbell*a  

* Corresponding authors

a Department of Electrical and Computer Engineering, University of Minnesota, 200 Union Street, Minneapolis, Minnesota 55455, USA
E-mail: campb001@umn.edu

b National Nanotechnology Center, King Abdulaziz City for Science and Technology (KACST), Riyadh 6086-11442, Kingdom of Saudi Arabia

Abstract

Correction for ‘Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition’ by Stephen A. Campbell et al., Nanoscale, 2018, 10, 21374–21385.

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Article information

DOI
https://doi.org/10.1039/C8NR90273A
Article type
Correction
Submitted
04 Dec 2018
Accepted
04 Dec 2018
First published
11 Dec 2018
This article is Open Access
Creative Commons BY license

Nanoscale, 2019,11, 365-365

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Correction: Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition

S. K. Pandey, H. Alsalman, J. G. Azadani, N. Izquierdo, T. Low and S. A. Campbell, Nanoscale, 2019, 11, 365 DOI: 10.1039/C8NR90273A

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