Issue 32, 2019

Ultralow-voltage all-carbon low-dimensional-material flexible transistors integrated by room-temperature photolithography incorporated filtration

Abstract

Low dimensional materials (LDMs) have drawn world-wide attention as potential candidates applied in flexible and wearable electronics. It is an attractive research topic to systematically integrate all-LDMs to realize flexible electronics. However, it is difficult to pattern LDMs by conventional photolithography and plasma etching without harming the other overlapped analogous components. Here, we propose and realize independent-operation all-LDM flexible transistors integrated into a 2-inch substrate using the proposed photolithography incorporated filtration (PIF) platform. The transistors consisting of only one-dimensional carbon nanotubes and two-dimensional graphene oxide show an ultralow operating voltage of less than −1 V, an extraordinary subthreshold swing (SS) of 170 mV dec−1, a low threshold voltage (Vth) of −0.3 V and a high carrier mobility up to 105 cm2 V−1 s−1. Moreover, the device shows a small bending radius of 1 mm and a transistor transparency of 94%. The full room-temperature process further demonstrates the great potential of applying the proposed devices and the PIF platform to future high-performance flexible transparent electronics. This work provides a novel route to tackle the difficulty in integrating solution processed LDMs.

Graphical abstract: Ultralow-voltage all-carbon low-dimensional-material flexible transistors integrated by room-temperature photolithography incorporated filtration

Supplementary files

Article information

Article type
Paper
Submitted
22 Mar 2019
Accepted
13 Jun 2019
First published
18 Jun 2019

Nanoscale, 2019,11, 15029-15036

Ultralow-voltage all-carbon low-dimensional-material flexible transistors integrated by room-temperature photolithography incorporated filtration

C. Du, M. Zhang, Q. Huang, S. Zhang and Y. Chai, Nanoscale, 2019, 11, 15029 DOI: 10.1039/C9NR02511A

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