High-throughput screening and classification of layered di-metal chalcogenides†
Abstract
Through employing the layered-crystal determination program based on the topology-scaling algorithm, 450 MmNnXx (M, N = metal elements, X = S, Se) layered di-metal chalcogenides (LDCs) are identified from the 1 602 011 crystalline materials known in two Material Genome databases (Materials Project and OQMD). Their structures are classified into three types, 104 compounds in standard MmNnXx homo-layered structures, 34 in MmXx1/NnXx2 hetero-layered structures and 312 in large-cation M-intercalated NnXx layered structures. 312 cation-intercalated LDCs are mostly composed of large cations such as K, Rb, Cs, Ba and Tl, and are not easy to be exfoliated into few-layer 2-dimensional (2D) structures because of the strong ionic bonding between the large cations and the negatively charged layers. In contrast, the homo-layered and hetero-layered structures may be exfoliated into stable few-layer 2D structures due to the weak inter-layer van der Waals interaction. The band structure screening identifies 34 direct- and 108 indirect-band-gap layered semiconductors from the 450 LDCs, and 24 of them have small in-plane effective masses and thus high mobility of hole or electron carriers. Two stable, direct-band-gap and high-mobility mono-layer semiconductors MgAl2S4 and ZnIn2S4 are found from group II–III2–VI4 LDCs. Furthermore, 83 LDCs composed of the magnetic metal elements are found, which provides new platforms for the search of 2D magnetic crystals similar to Cr2Ge2Te6 with intrinsic ferromagnetism. This work extends the search of layered materials from metal dichalcogenides to ternary chalcogenides and can serve as a map for the future discovery of novel 2D semiconductors and magnetic materials.