Issue 42, 2019

Large-area, lithography-free, narrow-band and highly directional thermal emitter

Abstract

Thermal radiation with narrow bandwidth and well-defined emission directions is highly sought after for a variety of applications, ranging from infrared sensing and thermal imaging to thermophotovoltaics. Here, a large-area (4-inch-diameter) long-wavelength infrared thermal emitter is presented, which is spectrally selective, highly directional, and easily fabricated. The basic structure of the proposed thermal emitter is composed of a truncated one-dimensional photonic crystal and a continuous metallic film separated by a dielectric spacer. Experimental results show that the emitter exhibits a narrowband thermal emittance peak of 92% in the normal direction at the wavenumber of 943.4 cm−1 with a bandwidth of 12.5 cm−1 and a narrow angular emission lobe with a limited solid angle of 0.325 sr (0.115 sr) for s (p) polarization. Numerical simulation analyses are performed to corroborate the experimental observations. Temporal coupled-mode theory combined with transfer matrix method is employed to analytically investigate the emission properties of the structure, which not only can be used to understand the experimental results, but also plays a certain guidance role in designing a thermal emitter with the desired properties. The present thermal emitter can be implemented for thermal photonics management, allowing applications in thermal imaging and medical systems, etc.

Graphical abstract: Large-area, lithography-free, narrow-band and highly directional thermal emitter

Supplementary files

Article information

Article type
Communication
Submitted
20 Jul 2019
Accepted
02 Oct 2019
First published
18 Oct 2019
This article is Open Access
Creative Commons BY-NC license

Nanoscale, 2019,11, 19742-19750

Large-area, lithography-free, narrow-band and highly directional thermal emitter

X. Liu, Z. Li, Z. Wen, M. Wu, J. Lu, X. Chen, X. Zhao, T. Wang, R. Ji, Y. Zhang, L. Sun, B. Zhang, H. Xu, J. Zhou, J. Hao, S. Wang, X. Chen, N. Dai, W. Lu and X. Shen, Nanoscale, 2019, 11, 19742 DOI: 10.1039/C9NR06181A

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