Issue 2, 2019, Issue in Progress

New aspects of improving the performance of WO3 thin films for photoelectrochemical water splitting by tuning the ultrathin depletion region

Abstract

In this work, we explored a facile, scalable and effective method for substantially enhancing photocurrent and incident-photon-to-current efficiency of WO3 thin-film photoanodes by a mild reduction treatment under low oxygen pressure. Experimental data from photoelectrochemical and electrochemical impedance spectroscopies have shown that such treatment can increase the charge carrier density on WO3 photoanode surfaces resulting in improvements in hole collection efficiency and reduction in charge recombination. Despite a much thinner layer of WO3 (about 500 nm) compared to those in other published studies, the electrodes exhibited an ultra-high photocurrent density of 1.81 mA cm−2 at 1.23 V vs. RHE. This current density is one of the highest ones among WO3-based photoanodes described in literature. The proposed surface modulation approach offers an effective and scalable method to prepare high-performance thin film photoanodes for photoelectrochemical water splitting.

Graphical abstract: New aspects of improving the performance of WO3 thin films for photoelectrochemical water splitting by tuning the ultrathin depletion region

Supplementary files

Article information

Article type
Paper
Submitted
25 Oct 2018
Accepted
17 Dec 2018
First published
08 Jan 2019
This article is Open Access
Creative Commons BY license

RSC Adv., 2019,9, 899-905

New aspects of improving the performance of WO3 thin films for photoelectrochemical water splitting by tuning the ultrathin depletion region

J. Cen, Q. Wu, D. Yan, W. Zhang, Y. Zhao, X. Tong, M. Liu and A. Orlov, RSC Adv., 2019, 9, 899 DOI: 10.1039/C8RA08875F

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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