Structural exploration of AuxM− (M = Si, Ge, Sn; x = 9–12) clusters with a revised genetic algorithm†
Abstract
We used a revised genetic algorithm (GA) to explore the potential energy surface (PES) of AuxM− (x = 9–12; M = Si, Ge, Sn) clusters. The most interesting finding in the structural study of AuxSi− (x = 9–12) is the 3D (Au9Si− and Au10Si−) → quasi-planar 2D (Au11Si− and Au12Si−) structural evolution of the Si-doped clusters, which reflects the competition of Au–Au interactions (forming a 2D structure) and Au–Si interactions (forming a 3D structure). The AuxM− (x = 9–12; M = Ge, Sn) clusters have quasi-planar structures, which suggests a lower tendency of sp3 hybridization and a similarity of electronic structure for the Ge or Sn atom. Au9Si− and Au10Si− have a 3D structure, which can be viewed as being built from Au8Si− and Au9Si− with an extra Au atom bonded to a terminal gold atom, respectively. In contrast, the quasi-planar structures of AuxM− (x = 9–12; M = Ge, Sn) reflect the domination of the Au–Au interactions. Including the spin–orbit (SO) effects is very important to calculate the simulated spectrum (structural fingerprint information) in order to obtain quantitative agreement between theoretical and future experimental PES spectra.