A ternary SnS1.26Se0.76 alloy for flexible broadband photodetectors

Abstract

Layered two-dimensional (2D) materials often display unique functionalities for flexible 2D optoelectronic device applications involving natural flexibility and tunable bandgap by bandgap engineering. Composition manipulation by alloying of these 2D materials represents an effective way in fulfilling bandgap engineering, which is particularly true for SnS_2xSe_2(1−x) alloys showing a continuous bandgap modulation from 2.1 eV for SnS₂ to 1.0 eV for SnSe₂. Here, we report that a ternary SnS_1.26Se_0.76 alloy nanosheet can serve as an efficient flexible photodetector, possessing excellent mechanical durability, reproducibility, and high photosensitivity. The photodetectors show a broad spectrum detection ranging from visible to near infrared (NIR) light. These findings demonstrate that the ternary SnS_1.26Se_0.76 alloy can act as a promising 2D material for flexible and wearable optoelectronic devices.