Issue 51, 2019, Issue in Progress

CVD controlled growth of large-scale WS2 monolayers

Abstract

Monolayer tungsten disulfide (WS2) with a direct band gap of ca. 2.0 eV and stable properties has been a hotspot in two-dimensional (2D) nanoelectronics and optoelectronics. However, it remains challenging to successfully prepare monolayer WS2. In this paper, we report the chemical vapor deposition (CVD) growth behavior of hexagonal WS2 monolayers by using WS2 powders and sodium triosulfate (Na2S2O3) as precursors. We observed the Na2S2O3 has a significant effect on the WS2 triangular and leaf-like shapes. In addition, based on proposed S-termination and W-termination theory, the growth mechanisms for different shapes of WS2 were discussed.

Graphical abstract: CVD controlled growth of large-scale WS2 monolayers

Article information

Article type
Paper
Submitted
09 Aug 2019
Accepted
05 Sep 2019
First published
19 Sep 2019
This article is Open Access
Creative Commons BY license

RSC Adv., 2019,9, 29628-29635

CVD controlled growth of large-scale WS2 monolayers

Z. Xu, Y. Lv, J. Li, F. Huang, P. Nie, S. Zhang, S. Zhao, S. Zhao and G. Wei, RSC Adv., 2019, 9, 29628 DOI: 10.1039/C9RA06219J

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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