Issue 65, 2019, Issue in Progress

Influence of SiO2 or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene

Abstract

The substrate effect on the electronic transport of graphene with a density of defects of about 0.5% (0.5%G) is studied. Devices composed of monolayer 0.5%G, partially deposited on SiO2 and h-BN were used for transport measurements. We find that the 0.5%G on h-BN exhibits ambipolar transfer behaviours under ambient conditions, in comparison to unipolar p-type characters on SiO2 for the same flake. While intrinsic defects in graphene cause scattering, the use of h-BN as a substrate reduces p-doping.

Graphical abstract: Influence of SiO2 or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene

Supplementary files

Article information

Article type
Paper
Submitted
06 Nov 2019
Accepted
12 Nov 2019
First published
21 Nov 2019
This article is Open Access
Creative Commons BY license

RSC Adv., 2019,9, 38011-38016

Influence of SiO2 or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene

Z. Wang, Q. Yao, Y. Hu, C. Li, M. Hußmann, B. Weintrub, J. N. Kirchhof, K. Bolotin, T. Taniguchi, K. Watanabe and S. Eigler, RSC Adv., 2019, 9, 38011 DOI: 10.1039/C9RA09197A

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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