Issue 39, 2019

Transition from nonvolatile bipolar memory switching to bidirectional threshold switching in layered MoO3 nanobelts

Abstract

Resistive switching (RS) can be divided into two categories, namely nonvolatile memory switching and volatile threshold switching, depending on the volatility. MoO3 is one type of versatile transition metal oxide with a high work function, large electron affinity and wide band gap for potential applications in electronics, optoelectronics, batteries and electrochromic devices. Herein, we report the transition from nonvolatile memory to volatile threshold switching in single MoO3 nanobelts simply by changing the electrodes from Au to Ag. The one-dimensional (1D) α-MoO3 nanobelts are synthesized by a hydrothermal method and annealed under different atmospheres to adjust the concentration of oxygen vacancies. The prepared single MoO3 nanobelt is used to serve as the RS layer to construct lateral two-terminal RS devices. By using Au as the electrodes, the MoO3 nanobelts exhibit typical nonvolatile bipolar memory RS behaviors. On the other hand, bidirectional threshold RS properties can be achieved by employing Ag as the electrodes due to the large contact resistance between Ag and MoO3. More importantly, the threshold RS performance is significantly enhanced by annealing the nanobelts in N2. The ON/OFF current ratio is increased up to 3 × 105 while the threshold voltage is decreased down to 0.75 V. These results demonstrate the diverse RS behaviors in single 1D MoO3 nanobelts and potential applications in volatile and non-volatile switching devices. In addition, the finding provides guidelines for improvement and/or alternation of RS behaviors through defect engineering and/or device modification in the multifunctional emerging devices.

Graphical abstract: Transition from nonvolatile bipolar memory switching to bidirectional threshold switching in layered MoO3 nanobelts

Article information

Article type
Paper
Submitted
16 Jul 2019
Accepted
05 Sep 2019
First published
09 Sep 2019

J. Mater. Chem. C, 2019,7, 12160-12169

Transition from nonvolatile bipolar memory switching to bidirectional threshold switching in layered MoO3 nanobelts

H. Du, J. Chen, M. Tu, S. Luo, S. Li, S. Yuan, T. Gong, W. Huang, W. Jie and J. Hao, J. Mater. Chem. C, 2019, 7, 12160 DOI: 10.1039/C9TC03842F

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements