Correction: High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering

Shun Han; Xiaoling Huang; Mingzhi Fang; Weiguo Zhao; Shijie Xu; Deliang Zhu; Wangying Xu; Ming Fang; Wenjun Liu; Peijiang Cao; Youming Lu

doi:10.1039/C9TC90256B

Correction: High-performance UV detectors based on room-temperature deposited amorphous Ga₂O₃ thin films by RF magnetron sputtering

Shun Han,^a Xiaoling Huang,^a Mingzhi Fang,^a Weiguo Zhao,^a Shijie Xu,^b Deliang Zhu,*^a Wangying Xu,^a Ming Fang,^a Wenjun Liu,^a Peijiang Cao^a and Youming Lu^a

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* Corresponding authors

^a Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
E-mail: deliangzhu@163.com

^b Department of Physics, and Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Pokfulam Road, Hong Kong, China

Abstract

Correction for ‘High-performance UV detectors based on room-temperature deposited amorphous Ga₂O₃ thin films by RF magnetron sputtering’ by Shun Han et al., J. Mater. Chem. C, 2019, 7, 11834–11844.

Journal of Materials Chemistry C

Correction: High-performance UV detectors based on room-temperature deposited amorphous Ga₂O₃ thin films by RF magnetron sputtering

Abstract

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Correction: High-performance UV detectors based on room-temperature deposited amorphous Ga₂O₃ thin films by RF magnetron sputtering

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